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VISHAY
LS103A / 103B / 103C
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
* * * * Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop
9612009
Applications
HF-Detector Protection circuit Small battery charger AC-DC / DC-DC converters
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part LS103A LS103B LS103C Type differentiation VR = 40 V, VF @ IF 20 mA max. 0.37 V VR = 30 V, VF @ IF 20 mA max. 0.37 V VR = 20 V, VF @ IF 20 mA max. 0.37 V Ordering code LS103A-GS18 or LS103A-GS08 LS103B-GS18 or LS103B-GS08 LS103C-GS18 or LS103C-GS08 Remarks Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Test condition Part LS103A LS103B LS103C Peak forward surge current Power dissipation tp = 300 s, square pulse l = 4 mm, TL = constant Symbol VR VR VR IFSM Ptot Value 40 30 20 15 400 Unit V V V A mW
Document Number 85631 Rev. 1.2, 22-Apr-04
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LS103A / 103B / 103C
Vishay Semiconductors Thermal Characteristics
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Junction temperature Storage temperature range Test condition l = 4mm, TL = constant Symbol RthJA Tj Tstg Value 250 125 - 65 to + 150
VISHAY
Unit K/W C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Reverse Breakdown Voltage Test condition IR = 10 A Part LS103A LS103B LS103C Leakage current VR = 30 V VR = 20 V VR = 10 V Forward voltage drop Diode capacitance Reverse recovery time IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 to 200 mA, recover to 0.1 IR LS103A LS103B LS103C Symbol V(BR)R V(BR)R V(BR)R IR IR IR VF VF CD trr 50 10 Min 40 30 20 5 5 5 0.37 0.6 Typ. Max Unit V V V A A A V V pF ns
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1000 1000.000
5
100 100.000
I F - Forward Current ( mA)
10 10.000 1 1.000 0.100 0.1 0.010 0.01 0.001 0 100 200 300 400 500 600 700 800 900 1000 V F - Forward Voltage ( mV )
- Forward Current (A)
F
4 3 2 1 0 0.0
I
16765
0.5
1.0
1.5
2.0
16766
V F - Forward Voltage ( V )
Fig. 1 Forward Current vs. Forward Voltage
Fig. 2 Forward Current vs. Forward Voltage
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Document Number 85631 Rev. 1.2, 22-Apr-04
VISHAY
LS103A / 103B / 103C
Vishay Semiconductors
10000
I R - Reverse Current (A )
1000
100
10
1 0
16767
20
40
60
80
100 120 140 160
Tj - Junction Temperature ( C )
Fig. 3 Reverse Current vs. Junction Temperature
30
CD - Diode Capacitance ( pF )
f=1MHz 25 20 15 10 5 0 0 5 10 15 20 25 30
16768
V R - Reverse V oltage ( V )
Fig. 4 Diode Capacitance vs. Reverse Voltage
Itot-Typ. Non Repetitve Forward Surge Current (A)
25 20 15 10 5 0 0.1
1.0 tp - Pulse width ( ms )
10.0
16769
Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width
Document Number 85631 Rev. 1.2, 22-Apr-04
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LS103A / 103B / 103C
Vishay Semiconductors Package Dimensions in mm (Inches)
VISHAY
1. 7
1.5 0.1 (0.06 0.004)
Glass > R 3 (R 0.12)
0.47 max. (0.02) 3.5 0.2 (0.14 0.008)
Mounting Pad Layout
2.50 (0.098) max 1.25 (0.049) min
ISO Method E
G la
ss
(0 .0 7
Cathode indification
)
Glass case Quadro Melf / SOD 80 JEDEC DO 213 AA
5 (0.197) ref
96 12071
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Document Number 85631 Rev. 1.2, 22-Apr-04
2 (0.079) min
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
LS103A / 103B / 103C
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85631 Rev. 1.2, 22-Apr-04
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